BFW92A_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
BFW92A
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
e3
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Wide band RF amplifier up to GHz range.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 111 mg
3B
3
2
E
2
1
1C
19039
Electrostatic sensitive device.
Observe precautions for handling.
Marking: BFW92A
Pinning: 1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
25
V
V_CEO
15
V
V_EBO
2.5
V
I_C
25
mA
P_tot
300
mW
T_j
150
°C
T_stg
- 55 to + 150
°C
Amplifier 1
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
300
K/W
1) _{on glass fibre printed board (40 x 25 x 1.5) mm}3 _{plated with 35 μm Cu}
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base cut-off current V_CB = 10 V, I_E = 0
Emitter-base cut-off current
V_EB = 2.5 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
Collector-emitter saturation
voltage
I_C = 20 mA, I_B = 2 mA
DC forward current transfer ratio V_CE = 1 V, I_C = 2 mA
V_CE = 1 V, I_C = 25 mA
Collector-emitter cut-off current V_CE = 25 V, V_BE = 0
Symbol
Min
Typ.
Max
Unit
I_CBO
100
nA
I_EBO
10
μA
V_(BR)CEO
15
V
V_CEsat
0.1
0.6
V
h_FE
20
h_FE
20
I_CES
50
150
100
μA
Document Number 85041
Rev. 1.5, 08-Sep-08
www.vishay.com
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