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BFR96TS Datasheet, PDF (1/9 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor
BFR96TS
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
3
2
94 9308
13623
1
BFR96TS Marking: BFR96TS
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 70 °C
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
20
V
15
V
2.5
V
100
mA
700
mW
175
°C
–65 to +150 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
RthJA
150
K/W
plated with 35mm Cu
Document Number 85037
Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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