BFR93AF Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

VISHAY
BFR93AF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT490 is also re-
ducing package inductances resulting in some better
electrical performance. All of these aspects make this
device an ideal choice for demanding RF applica-
tions.
Features
• High power gain
• High transition frequency
• Low noise figure
Applications
Wide band amplifier up to GHz range.
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23
16867
Electrostatic sensitive device.
Observe precautions for handling.
Mechanical Data
Typ: BFR93AF
Case: Plastic case (SOT 490)
Weight: 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR93AF
Marking
R2
SOT490
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
12
V
V_EBO
2
V
I_C
50
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1/
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 µm Cu}
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 10 V, I_E = 0
Symbol
Min
Typ.
Max
Unit
I_CES
100
µA
I_CBO
100
nA
Document Number 85099
Rev. 2, 23-Sep-02
www.vishay.com
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