BFR92AF Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

VISHAY
Silicon NPN Planar RF Transistor
BFR92AF
Vishay Semiconductors
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
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Electrostatic sensitive device.
Observe precautions for handling.
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Features
• High power gain
• Low noise figure
• High transition frequency
Applications
Wide band amplifier up to GHz range.
Mechanical Data
Typ: BFR92AF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR92AF
Marking
P2
SOT-490
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
15
V
V_EBO
2
V
I_C
30
mA
P_tot
200
mW
T_j
150
°C
T_stg
-65 to +150
°C
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 µm Cu}
Symbol
R_thJA
Document Number 85098
Rev. 1.3, 30-Aug-04
Value
450
Unit
K/W
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