BFR90A Datasheet, PDF (1/9 Pages) TEMIC Semiconductors – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
BFR90A
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• RF amplifier up to GHz range specially for wide
band antenna amplifier
Mechanical Data
Case: TO-50 plastic case
Weight: approx. 111 mg
Pinning: 1 = collector, 2 = emitter, 3 = base
3B
3
2
E
2
1
1C
19039
Electrostatic sensitive device.
Observe precautions for handling.
Parts Table
Part
BFR90A
Ordering code
BFR90AGELB
Marking
BFR90A
Remarks
Packed in Bulk
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
Value
20
15
2
30
300
150
- 65 to + 150
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
Note:
1) _{on glass fibre printed board (40 x 25 x 1.5) mm}3 _{plated with 35 μm Cu}
Symbol
R_thJA
Value
300
Package
TO-50(3)
Unit
V
V
V
mA
mW
°C
°C
Unit
K/W
Document Number 85029
Rev. 1.6, 08-Sep-08
For technical support, please contact: [e-mail]
www.vishay.com
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