BFR181TF Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor
BFR181TF
Vishay Semiconductors
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
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Electrostatic sensitive device.
Observe precautions for handling.
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
• Small feedback capacitance
• Low noise figure
e3
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Typ: BFR181TF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR181TF
Marking
RF
SOT-490
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
T_amb ≤ 78 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
15
V
V_CEO
10
V
V_EBO
2
V
I_C
20
mA
I_B
2
mA
P_tot
160
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Document Number 85100
Rev. 1.3, 28-Apr-05
www.vishay.com
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