BFR181T Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure
D High power gain
1
1
94 9280
2
3
13 581
BFR181T Marking: RF
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
13 570
BFR181TW Marking: WRF
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
T_amb ≤ 78 °C
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
15
V
10
V
2
V
20
mA
2
mA
160
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm³
R_thJA
450
K/W
plated with 35mm Cu
Document Number 85024
Rev. 2, 20-Jan-99
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