BFG67_08 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
BFG67
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Small feedback capacitance
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
3
4
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave fre-
quencies.
Electrostatic sensitive device.
Observe precautions for handling.
19217
Mechanical Data
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: V3
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
10
V
V_EBO
2.5
V
I_C
50
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to +150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current V_CE = 20 V, V_BE = 0
Collector-base cut-off current V_CB = 15 V, I_E = 0
Emitter-base cut-off current
V_EB = 1 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
Collector-emitter saturation
voltage
I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 5 V, I_C = 15 mA
Document Number 85074
Rev. 1.3, 08-Sep-08
Symbol
Min
Typ.
Max
Unit
I_CES
100
μA
I_CBO
100
nA
I_EBO
1
μA
V_(BR)CEO
10
V
V_CEsat
0.1
0.4
V
h_FE
65
100
150
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