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BFG67 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN 8 GHz wideband transistors
Silicon NPN Planar RF Transistor
BFG67
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave
frequencies.
Features
D Small feedback capacitance
D Low noise figure
D High transition frequency
21
94 9279
13 579
3
4
BFG67 Marking: V3
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
20
V
10
V
2.5
V
50
mA
200
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
RthJA
450
K/W
plated with 35mm Cu
Document Number 85074
Rev. 1, 11-Nov-99
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