BF998 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Silicon N-channel dual-gate MOS-FETs

BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
D High cross modulation performance
D Low input capacitance
D High AGC-range
D High gain
21
1
2
94 9279
13 579
3
4
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
12
94 9278
4
3
95 10831
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
13 654
13 566
43
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85011
Rev. 4, 23-Jun-99
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