BF996S Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel dual-gate MOS-FET

BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
D High cross modulation performance
D Low input capacitance
D High AGC-range
21
G₂
D
94 9279
G₁
13 579
3
4
BF996S Marking: MH
Plastic case (SOT 143)
12623
S
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Type
Symbol
Value
Unit
V_DS
20
V
I_D
30
mA
±I_G1/G2SM
10
mA
P_tot
200
mW
T_Ch
150
°C
T_stg –65 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm³
R_thChA
450
K/W
plated with 35mm Cu
Document Number 85010
Rev. 3, 20-Jan-99
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