BF988_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• High cross modulation performance
e3
• Low noise figure
• High gain
• High AGC-range
• Low feedback capacitance
• Low input capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Input- and mixer stages especially VHF- and UHF-
tuners.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF988
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
3
4
2
1
G2
D
G1
S
Electrostatic sensitive device.
Observe precautions for handling.
13625
Parts Table
Part
BF988
BF988A
BF988A
BF988A
Ordering Ccode
BF988
BF988
Marking
TO50
TO50
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_DS
12
V
I_D
30
mA
± I_G1/G2SM
10
mA
P_tot
200
mW
T_Ch
150
°C
T_stg
- 55 to + 150
°C
Document Number 85007
Rev. 1.7, 11-Sep-08
www.vishay.com
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