BF979 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon PNP Planar RF Transistor

Silicon PNP Planar RF Transistor
BF979
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and
low modulation.
Features
D High cross modulation performance
D High power gain
D Low noise
D High reverse attenuation
3
2
94 9308
13623
1
BF979 Marking: BF979
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
–V_CBO
20
V
–V_CEO
20
V
–V_EBO
3
V
–I_C
50
mA
P_tot
300
mW
T_j
150
°C
T_stg
–55 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm³
R_thJA
300
K/W
plated with 35mm Cu
Document Number 85006
Rev. 3, 20-Jan-99
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