BF966SA Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF966S
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• High cross modulation performance
e3
• Low noise figure
• High AGC-range
• Low feedback capacitance
• Low input capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
4
2
1
G2
D
G1
S
Electrostatic sensitive device.
Observe precautions for handling.
13625
Applications
Input- and mixer stages especially UHF-tuners.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF966S
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Part
BF966S
BF966SA
BF966SB
Ordering Ccode
BF966SA or BF966SB
BF966SA
BF966SB
Marking
BF966S
BF966S
BF966S
TO50
TO50
TO50
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_DS
20
V
I_D
30
mA
± I_G1/G2SM
10
mA
P_tot
200
mW
T_Ch
150
°C
T_stg
- 55 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
R_thChA
450
K/W
1) _{on glass fibre printed board (40 x 25 x 1.5) mm}3 _{plated with 35 µm Cu}
Document Number 85004
Rev. 1.5, 15-Apr-05
www.vishay.com
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