BF961 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF961
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• High cross modulation performance
• Low noise figure
• High AGC-range
• Low feedback capacitance
• Low input capacitance
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
3
4
2
1
G2
D
G1
S
Electrostatic sensitive device.
Observe precautions for handling.
13625
Parts Table
Part
BF961
BF961A
BF961B
Ordering Ccode
BF961A or BF961B
BF961A
BF961B
BF961
BF961
BF961
Marking
TO50
TO50
TO50
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_DS
20
V
I_D
30
mA
± I_G1/G2SM
10
mA
P_tot
200
mW
T_Ch
150
°C
T_stg
- 55 to + 150
°C
Maximum Thermal Resistance
Parameter
Channel ambient
Test condition
1)
1) _{on glass fibre printed board (40 x 25 x 1.5) mm}3 _{plated with 35 µm Cu}
Symbol
R_thChA
Document Number 85002
Rev. 1.5, 25-Nov-04
Value
450
Unit
K/W
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