BF579_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon PNP Planar RF Transistor

Not for new design, this product will be obsoleted soon
BF579 / BF579R
Vishay Semiconductors
Silicon PNP Planar RF Transistor
Features
• High transition frequency
• Low distortion
e3
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
UHF/VHF uncontrolled prestages with low noise and
low cross modulation.
1
BF579
2
3
1
BF579R
3
Electrostatic sensitive device.
Observe precautions for handling.
2
19212
Mechanical Data
Typ: BF579
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BF579R
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
- V_CBO
20
V
- V_CEO
20
V
- V_EBO
3
V
- I_C
25
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 55 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector cut-off current
- V_CE = 20 V, V_BE = 0
- I_CES
100
μA
Collector-base cut-off current - V_CB = 15 V, I_E = 0
- I_CBO
100
nA
Emitter-base cut-off current
- V_EB = 3 V, I_C = 0
- I_EBO
10
μA
Collector-emitter breakdown - I_C = 1 mA, I_B = 0
- V_(BR)CEO
20
V
voltage
DC forward current transfer ratio - V_CE = 10 V, - I_C = 10 mA
h_FE
20
50
90
Document Number 85001
Rev. 1.5, 05-Sep-08
www.vishay.com
1