BB824 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Dual Capacitance Diode

BB824
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
D High capacitance ratio
Applications
Tuning of separate resonant circuits, push–pull circuits
in FM range, for car radios
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Type
Symbol Value
Unit
V_RRM
20
V
V_R
18
V
I_F
50
mA
T_j
125
°C
T_stg –55...+150 °C
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Reverse current
Diode capacitance ¹)
V_R=16V
V_R=16V, T_j=60°C
V_R=2V
V_R=8V
Capacitance ratio
Series resistance
V_R=2V,8V, f=1MHz
V_R=2V, f=100MHz
Group 2
Group 3
Group 2
Group 3
I_R
I_R
C_D
C_D
C_D
C_D
C_D2/ C_D8
r_s
42.5
43.7
17.5
18.0
2.25
20 nA
200 nA
43.8 pF
45 pF
19.2 pF
19.8 pF
2.45
0.5 W
1_{) In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%.}
Document Number 85556
Rev. 3, 01-Apr-99
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