BB814 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Dual Capacitance Diode

BB814
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
Applications
Tuning of separate resonant circuits, push–pull circuits
in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Type
Symbol Value
Unit
V_RRM
20
V
V_R
18
V
I_F
50
mA
T_j
125
°C
T_stg –55...+150 °C
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Reverse current
Diode capacitance ¹)
V_R=16V
V_R=16V, T_j=60°C
V_R=2V
V_R=8V
Capacitance ratio
Series resistance
V_R=2V,8V, f=1MHz
C_D=38pF, f=100MHz
Group 1
Group 2
Group 1
Group 2
I_R
I_R
C_D
C_D
C_D
C_D
C_D2/ C_D8
r_s
43
44.5
19.1
19.75
2.05
20 nA
200 nA
45 pF
46.5 pF
21.95 pF
22.70 pF
2.25
0.5 W
1_{) In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%.}
Document Number 85555
Rev. 3, 01-Apr-99
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