BB804 Datasheet, PDF (1/3 Pages) NXP Semiconductors – VHF variable capacitance double diode

BB804
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
Applications
Tuning of separate resonant circuits, push–pull circuits
in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Type
Symbol Value
Unit
V_RRM
20
V
V_R
18
V
I_F
50
mA
T_j
100
°C
T_stg –55...+150 °C
T_j = 25_C
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Reverse current
Diode capacitance ¹)
Capacitance ratio
Series resistance
Figure of merit
V_R=16V
V_R=16V, T_j=60°C
V_R=2V, f=1MHz
V_R=2V, f=1MHz
V_R=2V, f=1MHz
V_R=2V, f=1MHz
V_R=2V, f=1MHz
V_R=2V, f=1MHz
V_R=2V,8V, f=100MHz
C_D=38pF, f=100MHz
C_D=38pF, f=100MHz
I_R
I_R
20 nA
0.2 mA
C_D
42
47.5 pF
Group 0
C_D
42
43.5 pF
Group 1
C_D
43
44.5 pF
Group 2
C_D
44
45.5 pF
Group 3
C_D
45
46.5 pF
Group 4
C_D
46
47.5 pF
W ^{CD2/ CD8 1.65}
1.75
r_s
0.3 0.4
Q
100 140
1_{) A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance}
groups available only on request.
Document Number 85554
Rev. 3, 01-Apr-99
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