BAY80 Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose diode

Silicon Epitaxial Planar Diode
Applications
General purpose
BAY80
Vishay Telefunken
Absolute Maximum Ratings
T_j = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
t_p=1ms
94 9367
Type
Symbol Value
Unit
V_RRM
150
V
V_R
120
V
I_FSM
1
A
I_FRM
625
mA
I_F
250
mA
I_FAV
200
mA
T_j
175
°C
T_stg –65...+200 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, T_L=constant
Symbol
Value
Unit
R_thJA
350
K/W
Document Number 85553
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack [phone]
1 (4)