BAW76 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
BAW76
Vishay Telefunken
94 9367
Absolute Maximum Ratings
T_j = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
t_p=1ms
V_R=0
x ^{l=4mm, TL=45°C}
l=4mm, T_L 25°C
Type
Symbol Value
Unit
V_RRM
75
V
V_R
50
V
I_FSM
2000
mA
I_FRM
450
mA
I_F
300
mA
I_FAV
150
mA
P_V
440
mW
P_V
500
mW
T_j
200
°C
T_stg –65...+200 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, T_L=constant
Symbol
Value
Unit
R_thJA
350
K/W
Document Number 85551
Rev. 2, 01-Apr-99
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