BAW56 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

Dual Surface Mount Switching Diode
BAW56
Vishay Telefunken
Features
D Fast switching speed
D High conductance
D Surface mount package ideally suited for
automatic insertion
D Common anode
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Peak forward surge current
Average forward current
t_p=1s
t_p=1ms
half wave rectification with resistive
load and f ≥ 50 MHz, on ceramic
substrate10mmx8mmx0.7mm
Forward current
on ceramic substrate
8mmx10mmx0.7mm
Power dissipation
on ceramic substrate
8mmx10mmx0.7mm
Junction and storage
temperature range
Symbol Value Unit
V_RM
100
V
V_RRM
70
V
=V_RWM
=V_R
I_FSM
1
A
I_FSM
4.5
A
I_FAV
150
mA
I_F
250
mA
P_tot
300
mW
T_j=T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
on ceramic substrate
8mmx10mmx0.7mm
Symbol Value Unit
R_thJA
430
K/W
Document Number 85549
Rev. 2, 17-Mar-99
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