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BAW56-V-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Switching Diode, Dual
Small Signal Switching Diode, Dual
BAW56-V-G
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common
anode
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23
Weight: approx. 8.1 mg
Packaging Codes/Options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
2
1
3
Parts Table
Part
BAW56-V-G
Ordering Code
BAW56-V-G-18 or BAW56-V-G-08
Type Marking
JDG
3
1
2
17033
Remarks
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test Condition
Symbol
Value
Unit
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
VR = VRRM
70
V
Forward continuous current
IF
250
mA
Non repetitive peak forward
current
tp = 1 µs
tp = 1 ms
tp = 1 s
IFSM
2
A
IFSM
1
A
IFSM
0.5
A
Power dissipation
Ptot
350 1)
mW
1) Device on fiberglass substrate
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1) Device on fiberglass substrate
Symbol
Value
Unit
RthJA
430
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Document Number 85872 For technical questions within your region, please contact one of the following:
www.vishay.com
Rev. 1.0, 04-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This document is subject to change without notice.
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000