BAW27 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Silicon Epitaxial Planar Diode
Features
D Low forward voltage drop
D High forward current capability
BAW27
Vishay Telefunken
Applications
High speed switch and general purpose use in com-
puter and industrial applications
94 9367
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward current
t_p=1ms
Average forward current
Power dissipation
Junction temperature
V_R=0
x ^{l=4mm, TL=45°C}
l=4mm, T_L 25°C
Storage temperature range
Type
Symbol Value
Unit
V_RRM
75
V
V_R
60
V
I_FSM
4
A
I_F
600
mA
I_FAV
300
mA
P_V
440
mW
P_V
500
mW
T_j
200
°C
T_stg –65...+200 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, T_L=constant
Symbol
Value
Unit
R_thJA
350
K/W
Document Number 85548
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack [phone]
1 (3)