BAV99-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – High conductance

www.vishay.com
BAV99-G
Vishay Semiconductors
Small Signal Switching Diode, Dual in Series
3
1
2
18109
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Fast switching speed
• High conductance
• Surface mount package ideally suited for
automatic insertion
• Connected in series
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912 







PARTS TABLE
PART
BAV99-G
ORDERING CODE
BAV99-G3-08 or BAV99-G3-18
INTERNAL CONSTRUCTION
Dual diodes serial
TYPE MARKING
JEG
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
V_RM
V_RRM = V_RWM = V_R
Peak forward surge current
Average forward current
t_p = 1 s
t_p = 1 μs
Half wave rectification with resistive load
and f  50 MHz, on ceramic substrate
10 mm x 8 mm x 0.7 mm
I_FSM
I_F(AV)
Forward current
On ceramic substrate
10 mm x 8 mm x 0.7 mm
I_F
Power dissipation
On ceramic substrate
10 mm x 8 mm x 0.7 mm
P_tot
VALUE
100
70
1
4.5
150
250
300
UNIT
V
A
mA
mW
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
On ceramic substrate
10 mm x 8 mm x 0.7 mm
R_thJA
Junction and storage temperature range
Operating temperature range
T_j = T_stg
T_op
VALUE
430
- 55 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
Rev. 1.0, 16-May-13
1
Document Number: 85421
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000