BAV70-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

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BAV70-G
Vishay Semiconductors
Small Signal Switching Diode, Dual
3
1
2
18108
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common cathode
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912







PARTS TABLE
PART
BAV70-G
ORDERING CODE
BAV70-G3-08 or BAV70-G3-18
INTERNAL CONSTRUCTION TYPE MARKING
Dual diodes common cathode
JJG
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Peak reverse voltage
Reverse voltage
Forward current (continuous)
Non repetitive peak forward current
Power dissipation ⁽¹⁾
t_p = 1 μs
t_p = 1 ms
t_p = 1 s
V_RRM
V_R
I_F
I_FSM
I_FSM
I_FSM
P_tot
Note
(1) _{Device on fiberglass substrate}
VALUE
70
70
250
2
1
0.5
350
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air ⁽¹⁾
Junction temperature
Storage temperature range
Operating temperature range
R_thJA
T_j
T_stg
T_op
Note
(1) _{Device on fiberglass substrate}
VALUE
430
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
mA
A
A
A
mW
UNIT
K/W
°C
°C
°C
Rev. 1.0, 16-May-13
1
Document Number: 85420
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000