BAV23C-G Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon epitaxial planar diode

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BAV23C-G
Vishay Semiconductors
Small Signal Switching Diode, Dual
3
1
2
18108_1
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode with common cathode
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912





PARTS TABLE
PART
BAV23C-G
ORDERING CODE
BAV23C-G3-08 or BAV23C-G3-18
INTERNAL CONSTRUCTION
Dual diodes common cathode
TYPE MARKING
KT7
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Continuous reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward current
Non-repetitive peak forward surge current
Maximum average forward rectified current ⁽¹⁾
Forward continuous current ⁽²⁾
Repetitive peak forward current
Power dissipation ⁽²⁾
t = 1 μs
t=1s
V_R
V_RRM
I_FSM
I_FSM
I_FAV
I_F
I_FRM
P_tot
Notes
(1) _{Measured under pulse conditions; pulse time = tp  0.3 ms}
(2) _{Device on fiberglass substrate}
VALUE
200
250
9.0
0.5
200
400
625
350
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air ⁽¹⁾
R_thJA
Junction temperature
T_j
Storage temperature range
T_stg
Operating temperature range
T_op
Note
(1) _{Device on fiberglass substrate}
VALUE
357
150
- 65 to + 150
- 55 to + 150
UNIT
V
V
A
A
mA
mA
mA
mW
UNIT
K/W
°C
°C
°C
Rev. 1.3, 17-May-13
1
Document Number: 85866
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000