BAS86_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

Small Signal Schottky Diode
BAS86
Vishay Semiconductors
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN junction
e2
guard ring against excessive voltage, such
as electrostatic discharges.
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing and coupling diodes for fast switching
and low logic level applications
• This diode is also available in a DO35 case with
type designation BAT86.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Applications where a very low forward voltage is
required
94 9371
Mechanical Data
Case: MiniMELF Glass case SOD80
Weight: approx. 31 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
BAS86
Ordering code
BAS86-GS18 or BAS86-GS08
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Continuous reverse voltage
Forward continuous current
T_amb = 25 °C
V_R
50
V
I_F
200¹⁾
mA
Repetitive peak forward current t_p < 1 s, T_amb = 25 °C, ν ≤ 0.5
I_FRM
500¹⁾
mA
Power dissipation¹⁾
T_amb = 25 °C
P_tot
200¹⁾
mW
1) _{Valid provided that electrodes are kept at ambient temperature}
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Ambient operating temperature
range
Storage temperature range
Test condition
Symbol
Value
Unit
R_thJA
300¹⁾
K/W
T_j
125
°C
T_amb
- 65 to + 125
°C
T_S
- 65 to +150
°C
1) _{Valid provided that electrodes are kept at ambient temperature}
Document Number 85511
Rev. 1.7, 03-Mar-06
www.vishay.com
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