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| BAS86 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier diode | |||
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Schottky Barrier Diode
Features
D Integrated protection ring against
static discharge
D Very low forward voltage
BAS86
Vishay Telefunken
Applications
Applications where a very low forward voltage
is required
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
Peak forward surge current
tp=10 ms
Repetitive peak forward current tpâ¤1s
Forward current
Average forward current
Junction temperature
Storage temperature range
Type
Symbol Value
Unit
VR
50
V
IFSM
5
A
IFRM
500
mA
IF
200
mA
IFAV
200
mA
Tj
125
°C
Tstg â65...+150 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mmx50mmx1.6mm RthJA
320
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Diode capacitance
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=40V
VR=1V, f=1MHz
Type
Symbol Min Typ Max Unit
VF
300 mV
VF
380 mV
VF
450 mV
VF
600 mV
VF
900 mV
IR
5 mA
CD
8 pF
Document Number 85511
Rev. 3, 01-Apr-99
www.vishay.de ⢠FaxBack +1-408-970-5600
1 (4)
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