BAS86-M Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

Small Signal Schottky Diode
BAS86-M
Vishay Semiconductors
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard
ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9371
Mechanical Data
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
Applications
• Applications where a very low forward voltage is
required
Parts Table
Part
BAS86-M
Ordering code
BAS86-M-18 or BAS86-M-08
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Forward continuous current
Repetitive peak forward current
Power dissipation¹⁾
t_p < 1 s, ν ≤ 0.5
1) _{Valid provided that electrodes are kept at ambient temperature}
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Ambient operating temperature
range
Storage temperature range
1) _{Valid provided that electrodes are kept at ambient temperature}
Type marking
-
Remarks
Tape and reel
Symbol
Value
Unit
V_R
50
V
I_F
200¹⁾
mA
I_FRM
500¹⁾
mA
P_tot
200¹⁾
mW
Symbol
Value
Unit
R_thJA
300¹⁾
K/W
T_j
125
°C
T_amb
- 65 to + 125
°C
T_S
- 65 to +150
°C
Document Number 83402 For technical questions within your region, please contact one of the following:
Rev. 1.0, 13-Jan-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
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