BAS85 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier diode

Schottky Barrier Diode
Features
D Integrated protection ring against
static discharge
D Very low forward voltage
BAS85
Vishay Telefunken
Applications
Applications where a very low forward voltage
is required
94 9371
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Reverse voltage
Peak forward surge current
t_p=10 ms
Repetitive peak forward current t_p≤1s
Forward current
Average forward current
Junction temperature
V_RWM=25V
Storage temperature range
Type
Symbol Value
Unit
V_R
30
V
I_FSM
5
A
I_FRM
300
mA
I_F
200
mA
I_FAV
200
mA
T_j
125
°C
T_stg –65...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mmx50mmx1.6mm R_thJA
320
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Diode capacitance
I_F=0.1mA
I_F=1mA
I_F=10mA
I_F=30mA
I_F=100mA
V_R=25V, t_p=300ms
V_R=1V, f=1MHz
Type
Symbol Min Typ Max Unit
V_F
240 mV
V_F
320 mV
V_F
400 mV
V_F
500 mV
V_F
800 mV
I_R
2.3 mA
C_D
10 pF
Document Number 85510
Rev. 3, 01-Apr-99
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