BAS7002V Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

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BAS70-02V-V-G
Vishay Semiconductors
Small Signal Schottky Diode
1
2
22321
MECHANICAL DATA
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating: UL 94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/10 s at terminals
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• This diode features very low turn-on voltage and
fast switching
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Space saving SOD-523 package
• Material categorization: For definitions of
compliance
please
see
www.vishay.com/doc?99912
PARTS TABLE
PART
BAS70-02V-V-G
ORDERING CODE
BAS70-02V-V-G-08
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
.X
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
V_RRM
I_F
I_FSM
P_tot
VALUE
70
100
600
150
UNIT
V
mA
mA
mW
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
R_thJA
Junction temperature
T_j
Storage temperature range
T_stg
VALUE
680
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve breakdown voltage
Leakage current
I_R = 10 μA (pulsed)
V_R = 50 V, t_p < 300 μs
V_(BR)
70
I_R
Forward voltage
Diode capacitance
t_p < 300 μs, I_F = 1.0 mA
V_F
t_p < 300 μs, I_F = 15 mA
V_F
V_R = 0 V, f = 1 MHz
C_D
Reserve recovery time
I_F = 10 mA, I_R = 10 mA,
i_R = 1 mA, R_L = 100 
t_rr
TYP.
20
1.5
MAX.
100
410
1000
2
5
UNIT
V
nA
mV
mV
pF
ns
Rev. 1.1, 21-Jan-13
1
Document Number: 82393
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000