BAS70 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70/–04/–05/–06
Vishay Telefunken
Surface Mount Schottky Barrier Diodes
Features
D Low Turn–on Voltage
D Fast Switching
D PN Junction Guard Ring for Transient and ESD
Protection
Applications
Fast switches in thick and thin film circuits
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Peak forward surge current
Average forward current
t_p<1s, on fiberglass substrate
Forward current
on fiberglass substrate
Power dissipation
on fiberglass substrate
Junction and storage temperature range
Symbol Value Unit
V_RRM
70
V
=V_RWM
=V_R
I_FSM
600
mA
I_FAV
100
mA
I_F
200
mA
P_d
200
mW
T_j=T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
on fiberglass substrate
Symbol
Value
Unit
R_thJA
625
K/W
Document Number 85507
Rev. 1, 01-Apr-99
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