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BAS386_12 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Schottky Diode
Small Signal Schottky Diode
BAS386
Vishay Semiconductors
Features
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
9612315
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10 k per 13" reel (8 mm tape), 10 k/box
TR/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
BAS386
Type differentiation
VR = 50 V
Ordering code
BAS386-TR3 or BAS386-TR
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
50
V
Peak forward surge current
tp = 10 ms
IFSM
5
A
Repetitive peak forward current
tp ≤ 1 s
IFRM
500
mA
Forward continuous current
IF
200
mA
Average forward current
IFAV
200
mA
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Document Number 85505 For technical questions within your region, please contact one of the following:
Rev. 2.0, 23-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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