BAS385_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

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BAS385
Vishay Semiconductors
Small Signal Schottky Diode
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
PARTS TABLE
PART
TYPE DIFFERENTATION
BAS385
V_R = 30 V
ORDERING CODE
BAS385-TR3 or BAS385-TR
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
V_R
Peak forward surge current
Repetitive peak forward current
Forward continuous current
t_p = 10 ms
t_p  1 s
I_FSM
I_FRM
I_F
Average forward current
V_RWM = 25 V
I_FAV
VALUE
30
5
300
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R_thJA
Junction temperature
T_j
Storage temperature range
T_stg
VALUE
320
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Reserve current
Diode capacitance
I_F = 0.1mA
V_F
I_F = 1 mA
V_F
I_F = 10 mA
V_F
I_F = 30 mA
V_F
I_F = 100 mA
V_F
V_R = 25 V, t_p = 300 μs
I_R
V_R = 1 V, f = 1 MHz
C_D
TYP.
MAX.
240
320
400
500
800
2.3
10
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 2.1, 09-May-12
1
Document Number: 85504
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000