BAS19 Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose diodes

Surface Mount Switching Diode
Features
D Silicon planar epitaxial high speed diode
D For switching and general purpose applications
BAS19–BAS21
Vishay Telefunken
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Working peak reverse voltage
=DC Blocking voltage
Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Forward current
Power dissipation
Junction and storage
temperature range
t=1ms
t=1s
t_p<0.3ms
T_Case=T_L (8mm from Case)
=T_amb
T_Case=T_L (8mm from Case)
=T_amb
94 8550
Type
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Symbol
V_RWM
=V_R
V_RRM
V_RRM
V_RRM
I_FSM
I_FSM
I_FRM
I_FAV
I_F
Value Unit
100
V
150
V
200
V
120
V
200
V
250
V
2.5
A
0.5
A
625
mA
200
mA
400
mA
P_tot
250 mW
T_j=T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
Symbol
Value
Unit
R_thJA
500
K/W
Document Number 85540
Rev. 1, 01-Apr-99
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