BAS16 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Small Signal Diode

Silicon Epitaxial Planar Diode
Features
D Ultra fast switching speed
D Surface mount package ideally
suited for automatic insertion
D High conductance
BAS16
Vishay Telefunken
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Symbol Value Unit
Non repetitive peak reverse voltage
V_RM
100
V
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
V_RRM
75
V
=V_RWM
=V_R
Peak forward surge current
t_p=1s
I_FSM
1
A
t_p=1ms
I_FSM
2
A
Average forward current
half wave rectification with resistive I_FAV
load and f ≥ 50 MHz, on ceramic
150
mA
substrate 8mmx10mmx0.7mm
Forward current
on ceramic substrate
8mmx10mmx0.7mm
I_F
300
mA
Power dissipation
on ceramic substrate
8mmx10mmx0.7mm
P_tot
350
mW
Junction and storage
temperature range
T_j=T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
on ceramic substrate
8mmx10mmx0.7mm
Symbol Value Unit
R_thJA
357
K/W
Document Number 85539
Rev. 1, 01-Apr-99
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