BAS16-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Fast Switching Diode

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BAS16-G
Vishay Semiconductors
Small Signal Fast Switching Diode
3
1
2
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Ultra fast switching speed
• Surface mount package ideally suited for
automatic insertion
• High conductance
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912 
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PARTS TABLE
PART
ORDERING CODE
BAS16-G
BAS16-G3-08 or BAS16-G3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
AK
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
V_RM
V_RRM = V_RWM = V_R
Peak forward surge current
Average forward current
t_p = 1 s
t_p = 1 μs
Half wave rectification with resistive load and
f  50 MHz, on ceramic substrate
8 mm x 10 mm x 0.7 mm
I_FSM
I_FSM
I_F(AV)
Forward current
On ceramic substrate
8 mm x 10 mm x 0.7 mm
I_F
Power dissipation
On ceramic substrate
8 mm x 10 mm x 0.7 mm
P_tot
VALUE
100
75
1
2
150
300
350
UNIT
V
V
A
A
mA
mA
mW
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
On ceramic substrate
8 mm x 10 mm x 0.7 mm
R_thJA
Junction and storage temperature range
Operating temperature range
T_j = T_stg
T_op
VALUE
357
-55 to +150
-55 to +150
UNIT
K/W
°C
°C
Rev. 1.1, 22-Nov-13
1
Document Number: 85416
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000