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| BAR65V-02V Datasheet, PDF (1/4 Pages) Vishay Siliconix – RF PIN Diode | |||
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VISHAY
BAR65V-02V
Vishay Semiconductors
RF PIN Diode
Mechanical Data
Case: Plastic case (SOD 523)
Weight: 1.5 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box
Description
With the very low forward resistance combined with a
low reverse capacitance the BAR65V-02V is ideal for
RF-signal switching. Depending on the forward cur-
rent (If) the forward resistance (rf) can be reduced to
only a few hundred mâ¦. Driven In the reverse mode
the "switch is off" , the isolation capacitance is less
than 1pF. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
⢠Space saving SOD523 package with low series
inductance
⢠Very low forward resistance
⢠Small reverse capacitance
A
C
16863
Applications
⢠For frequency up to 3 GHz
⢠RF-signal switching
⢠Mobile, wireless and TV-Applications
Parts Table
Part
BAR65V-02V
Ordering code
Marking
BAR65V-02V-GS08
E
Remarks
Tape and Reel
Package
SOD523
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test condition
Sub type Symbol Value Unit
VR
30
V
IF
100
mA
Tj
150
°C
Tstg - 55 to + °C
150
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Symbol
Value
Unit
RthJS
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
Sub type Symbol Min
Typ.
Max
Unit
VR
30
V
IR
20
nA
VF
1.1
V
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
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