BAR64V-04W Datasheet, PDF (1/5 Pages) Vishay Siliconix – RF PIN Diodes - Dual, Series in SOT-323

RF PIN Diodes - Dual, Series in SOT-323
BAR64V-04W
Vishay Semiconductors
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-04W was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
2
3
1
1
2
3
18379
Features
• High reverse Voltage
• Small reverse capacitance
e3
• High breakdown voltage
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile, wireless and TV-Applications
Parts Table
Part
BAR64V-04W
Ordering code
BAR64V-04W-GS18 or BAR64V-04W-GS08
Marking
DW4
Remarks
Tape and Reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
Value
Unit
V_R
100
V
I_F
100
mA
T_j
150
°C
T_stg
- 55 to + 150
°C
Document Number 85646
Rev. 1.2, 15-Apr-05
www.vishay.com
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