BAR64V-04 Datasheet, PDF (1/4 Pages) Vishay Siliconix – RF PIN Diodes - Dual, Series in SOT-23

VISHAY
RF PIN Diodes - Dual, Series in SOT-23
BAR64V-04
Vishay Semiconductors
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-04 was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
2
1
3
3
1
2
18256
Features
• High reverse Voltage
• Small reverse capacitance
• High breakdown voltage
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile , wireless and TV-Applications
Mechanical Data
Case: Plastic case (SOT-23)
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR64V-04
Ordering code
BAR64V-04-GS18 or BAR64V-04-GS08
Marking
D4
Remarks
Tape and Reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
I_R = 10 µA
Reverse current
V_R = 50 V
Forward voltage
I_F = 50 mA
Document Number 85694
Rev. 1.2, 26-Apr-04
Symbol
Value
Unit
V_R
100
V
I_F
100
mA
T_j
150
°C
T_stg
- 55 to + 150
°C
Symbol
Min
Typ.
Max
Unit
V_R
100
V
I_R
50
nA
V_F
1.1
V
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