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| BAR63V-03 Datasheet, PDF (1/5 Pages) Vishay Siliconix – RF PIN Diode - Single in SOT-23 | |||
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RF PIN Diode - Single in SOT-23
BAR63V-03
Vishay Semiconductors
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-03 was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 ⦠while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diodes are
wireless, mobile and TV-systems.
2
1
3
3
1
2
18255
Features
⢠Low forward resistance
⢠Very small reverse capacitance
e3
⢠Lead (Pb)-free component
⢠Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-03
Ordering code
BAR63V-03-GS18 or BAR63V-03-GS08
Marking
C3
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Reverse current
VR = 35 V
Forward voltage
IF = 100 mA
Diode capacitance
f = 1 MHz, VR = 0
f = 1 MHz, VR = 5 V
Symbol
Value
Unit
VR
50
V
IF
100
mA
Tj
150
°C
Tstg
- 55 to + 150
°C
Symbol
Min
Typ.
Max
Unit
VR
50
V
IR
10
nA
VF
1.2
V
CD
0.28
pF
CD
0.23
0.3
pF
Document Number 85749
Rev. 1.4, 15-Apr-05
www.vishay.com
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