BAR63V-02V Datasheet, PDF (1/4 Pages) Vishay Siliconix – RF PIN Diode - Single in SOD-523

RF PIN Diode - Single in SOD-523
BAR63V-02V
Vishay Semiconductors
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
1
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
2
wireless, mobile and TV-systems.
2
16863
Features
• Low forward resistance
• Space saving SOD-523 package with
low series inductance
e3
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-02V
Ordering code
BAR63V-02V-GS18 or BAR63V-02V-GS08
Marking
C
Remarks
Tape and Reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Symbol
Value
Unit
V_R
50
V
I_F
100
mA
T_j
150
°C
T_stg
- 55 to + 150
°C
Symbol
Value
Unit
R_thJS
100
K/W
Document Number 85642
Rev. 1.5, 29-Jun-05
www.vishay.com
1