BA779 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon PIN Diodes

Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
BA779.BA779S
Vishay Telefunken
Applications
Current controlled HF resistance in adjustable
attenuators
94 8550
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Type
Symbol Value
Unit
V_R
30
V
I_F
50
mA
T_j
125
°C
T_stg –55...+125 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mmx50mmx1.6mm R_thJA
500
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Diode capacitance
Differential forward re-
sistance
I_F=20mA
V_R=30 V
f=100MHz, V_R=0
f=100MHz, I_F=1.5mA
Reverse impedance
f=100MHz, V_R=0
Minority carrier lifetime I_F=10mA, I_R=10mA
Type
BA779
BA779S
Symbol Min Typ Max Unit
V_F
1V
I_R
50 nA
C_D
r_f
0.5 pF
50 W
z_r
5
z_tr
9
4
kW
kW
ms
Document Number 85532
Rev. 3, 01-Apr-99
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