BA779-G Datasheet, PDF (1/4 Pages) Vishay Siliconix – Wide frequency range 10 MHz to 1 GHz

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1
BA779-G
Vishay Semiconductors
RF PIN Diodes
3
2
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BA779-G
ORDERING CODE
BA779-HG3-08
TYPE MARKING
PH1
INTERNAL
CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward continuous current
V_R
30
I_F
50
UNIT
V
mA
THERMAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
R_thJA
Junction temperature
T_j
Storage temperature range
T_stg
Operating temperature range
T_op
VALUE
500
125
- 55 to + 150
- 55 to + 125
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
I_F = 20 mA
V_F
Reverse current
V_R = 30 V
I_R
Diode capacitance
f = 100 MHz, V_R = 0 V
C_D
Differential forward resistance
f = 100 MHz, I_F = 1.5 mA
r_f
Reverse impedance
f = 100 MHz, V_R = 0 V
BA779-G
z_r
5
Minority carrier lifetime
I_F = 10 mA, I_R = 10 mA

TYP.
4
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF

k
μs
Rev. 1.2, 25-Feb-13
1
Document Number: 83321
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000