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BA779-2 Datasheet, PDF (1/4 Pages) Vishay Siliconix – RF PIN Diodes - Dual in SOT-23
RF PIN Diodes - Dual in SOT-23
BA779-2
Vishay Semiconductors
Features
• Wide frequency range 10 MHz to 1 GHz
• Lead (Pb)-free component
e3
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Current controlled HF resistance in adjustable
attenuators
2
1
3
3
1
2
18256
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BA779-2
Type differentiation
VR = 30 V, Zr > 5 kΩ
Ordering code
BA779-2-GS18 or BA779-2-GS08
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
on PC board
50 mm x 50 mm x 1.6 mm
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 20 mA
Reverse current
VR = 30 V
Diode capacitance
f = 100 MHz, VR = 0
Symbol
Value
Unit
VR
30
V
IF
50
mA
Symbol
Value
Unit
RthJA
500
K/W
Tj
125
°C
Tstg
- 55 to + 125
°C
Symbol
Min
Typ.
Max
Unit
VF
1
V
IR
50
nA
CD
0.5
pF
Document Number 85531
Rev. 1.6, 14-Apr-05
www.vishay.com
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