BA682_10 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Band Switching Diodes

BA682, BA683
Vishay Semiconductors
Band Switching Diodes
94 9371
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon planar diodes
• Low dynamic forward resistance
• Low diode capacitance
• High reverse impedance
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Band switching in VHF-tuners
PARTS TABLE
PART
BA682
BA683
TYPE DIFFERENTIATION
V_R = 35 V, r_f at I_F 3 mA = max. 0.7 Ω
V_R = 35 V, r_f at I_F 3 mA = max. 1.2 Ω
ORDERING CODE
BA682-GS18 or BA682-GS08
BA683-GS18 or BA683-GS08
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITIONS
Reverse voltage
Forward continuous current
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
SYMBOL
V_R
I_F
THERMAL CHARACTERISTICS ⁽¹⁾
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
ELECTRICAL CHARACTERISTICS ⁽¹⁾
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Dynamic forward resistance
TEST CONDITION
I_F = 100 mA
V_R = 20 V
f = 100 MHz, V_R = 1 V
f = 100 MHz, V_R = 3 V
f = 200 MHz, I_F = 3 mA
f = 200 MHz, I_F = 10 mA
PART
BA682
BA683
BA682
BA683
BA682
BA683
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
SYMBOL
V_F
I_R
C_D1
C_D2
C_D2
r_f1
r_f1
r_f2
r_f2
VALUE
35
100
UNIT
V
mA
SYMBOL
R_thJA
T_j
T_stg
VALUE
500
150
- 55 to + 150
UNIT
K/W
°C
°C
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
Ω
Ω
Ω
Ω
Document Number: 85530 For technical questions within your region, please contact one of the following:
Rev. 1.6, 16-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
1