BA157GP_11 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass Passivated Junction Fast Switching Rectifier

BA157GP thru BA159GP
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
SUPERECTIFIER^®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
I_F(AV)
1.0 A
V_RRM
400 V to 1000 V
I_FSM
20 A
t_rr
150 ns, 250 ns, 500 ns
I_R
5.0 μA
V_F
1.3 V
T_J max.
175 °C
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical I_R less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For general purpose of medium frequency rectification.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BA157GP
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at T_A = 55 °C
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
400
V_RMS
280
V_DC
400
I_F(AV)
I_FSM
Operating junction and storage temperature range
T_J, T_STG
BA158GP BA159DGP BA159GP UNIT
600
800
1000
V
420
560
700
V
600
800
1000
V
1.0
A
20
A
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL BA157GP BA158GP BA159DGP BA159GP UNIT
Maximum instantaneous forward voltage 1.0 A
V_F
Maximum DC reverse current
at rated DC blocking voltage
T_A = 25 °C
I_R
1.3
V
5.0
μA
Maximum reverse recovery time
Typical junction capacitance
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
t_rr
150
250
500
500
ns
4.0 V, 1 MHz
C_J
15
pF
Document Number: 88537 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000