B40C800G_13 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
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Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
+
~
+~
~−
~
−
Case Style WOG
PRIMARY CHARACTERISTICS
Package
WOG
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 0.9 A
T_J max.
Diode variations
0.9 A
65 V, 125 V, 200 V, 400 V, 600 V
45 A
10 μA
1.0 V
125 °C
Quad
FEATURES
• Ideal for printed circuit boards
• High case dielectric strength
• High surge current capability
e4
• Typical I_R less than 0.1 μA
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C800G
Maximum repetitive peak reverse voltage
V_RRM
65
Maximum RMS input voltage R- and C-load
V_RMS
40
Maximum average forward output current ^{R- and L-load}
for free air operation at T_A = 45 °C
C-load
I_F(AV)
Maximum non-repetitive peak voltage
Maximum DC blocking voltage
Maximum peak working voltage
Maximum repetitive peak forward surge current
Peak forward surge current single sine-wave on rated load
Rating for fusing at T_J = 125 °C (t < 100 ms)
Minimum series resistor C-load at V_RMS = ± 10 %
Maximum load capacitance
+ 50 %
- 10 %
V_RSM
V_DC
V_RWM
I_FRM
I_FSM
I²t
R_T
C_L
100
65
90
1.0
5000
Operating junction temperature range
Storage temperature range
T_J
T_STG
B80
C800G
125
80
200
125
180
2.0
B125
C800G
200
125
0.9
0.8
350
200
300
10
45
10
4.0
B250
C800G
400
250
600
400
600
8.0
2500
1000
500
- 40 to + 125
- 40 to + 150
B380
C800G
600
380
UNIT
V
V
A
1000
V
600
V
900
V
A
A
A²s
12

200
μF
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
B40
C800G
B80
C800G
Maximum instantaneous forward
voltage drop per diode
0.9 A
V_F
Maximum reverse current at rated
repetitive peak voltage per diode
I_R
B125
C800G
1.0
10
B250
C800G
B380
C800G
UNIT
V
μA
Revision: 08-Jul-13
1
Document Number: 88534
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000