B2S_13 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier

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B2S, B4S, B6S
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
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TO-269AA (MBS)
PRIMARY CHARACTERISTICS
Package
TO-269AA (MBS)
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 0.5 A
T_J max.
Diode variations
0.5 A
200 V, 400 V, 600 V
30 A
5 μA
1.0 V
150 °C
Quad
FEATURES
• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: TO-269AA (MBS)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2S
Device marking code
B2
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
200
V_RMS
140
V_DC
200
Maximum average forward output rectified current on
glass-epoxy PCB (fig. 1)
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I_FSM
Rating for fusing (t < 8.3 ms)
I²t
Operating junction and storage temperature range
T_J, T_STG
Note
(1) _{On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads}
B4S
B4
400
280
400
0.5 ⁽¹⁾
30
5.0
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward
voltage per diode
I_F = 0.5 A
V_F
Maximum DC reverse current at rated ^TA ^{= 25 °C}
DC blocking voltage per diode
T_A = 125 °C
I_R
Typical junction capacitance per diode 4.0 V, 1 MHz
C_J
VALUES
1.0
5.0
100
13
B6S
UNIT
B6
600
V
420
V
600
V
A
A
A²s
°C
UNIT
V
μA
pF
Revision: 19-Aug-13
1
Document Number: 88893
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000